GaN based Thermal Conductivity Gas Sensors
Talk, 79th Colloquium of the Gas Analysis and Sensing Group, Virtual
79th Colloquium of the Gas Analysis and Sensing Group: MEMS the word - Solid state integrated gas sensors
Talks and presentations
GaN-on-Si Thermoresistive Flow Sensor
Conference Talk, IEEE Sensors 2019, Montreal, Canada
In this paper we present for the first time a Gallium Nitride-on-Silicon (GaN-on-Si) anenometric flow sensor based on a gold (Au) thermoresistive hot-wire. The device was fabricated in a custom GaN process, with an etching process to release a membrane made of the GaN stack. This membrane thermally isolates the hot-wire, increasing its thermal efficiency, which was measured to be 1.04°C/mW. Testing was performed at mass flow rates from 0-4 SLPM using a custom gas rig. The sensitivity of the device, driven in a constant current mode at 3 different zero-flow temperatures, was compared showing an increase in peak sensitivity of 67% at 250°C compared to 150°C.