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GaN-on-Si Thermoresistive Flow Sensor

Published:

In this paper we present for the first time a Gallium Nitride-on-Silicon (GaN-on-Si) anenometric flow sensor based on a gold (Au) thermoresistive hot-wire. The device was fabricated in a custom GaN process, with an etching process to release a membrane made of the GaN stack. This membrane thermally isolates the hot-wire, increasing its thermal efficiency, which was measured to be 1.04°C/mW. Testing was performed at mass flow rates from 0-4 SLPM using a custom gas rig. The sensitivity of the device, driven in a constant current mode at 3 different zero-flow temperatures, was compared showing an increase in peak sensitivity of 67% at 250°C compared to 150°C.

teaching

Fundamentals of Modern VLSI Design

Undergraduate course, University of Wariwck, School of Engieering, 2019

I co-lectured on the 3rd year MEng, and final-year BEng module Fundamentals of Mordern VSLI Design with Prof. Marina Cole.